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The Applied Centura AdvantEdge Mesa silicon etch system brings ångstrom-level precision to shallow trench isolation (STI), buried bit/word line, and double patterning at 32nm and below. The system leverages multiple generations of production-proven technology, and its breakthrough inductively coupled plasma (ICP) source improves uniformity by eliminating inherent ICP ring-shaped power coupling signatures. Maximum process latitude can be achieved by controlling center-to-edge plasma characteristics. The new ICP source is seamlessly upgradeable to the AdvantEdge installed base.
Optional Pulsync technology adds innovative synchronized plasma pulsing capability for extended plasma control of neutral-to-ion densities. Leveraging this unique technology results in improved microloading, which enables patterning and critical silicon etch advances at 3X and beyond. Furthermore, Pulsync delivers radical-rich, low-electron-temperature plasmas, which minimize damage from ultraviolet radiation and charge buildup for gate etch.
The system's advanced electrostatic chuck edge temperature control offers enhanced temperature uniformity and temperature control at the extreme edge of the wafer, to increase the number of yielding dies per wafer.
Advanced chamber materials reduce cost of ownership and increase throughput by making possible "clean-mode" operation. In addition, first-wafer effects are eliminated, thereby ensuring wafer-to-wafer process repeatability, as proven in production.
AdvantEdge Mesa demonstrates <1% etch depth non-uniformity to the extreme edge of the wafer, <1nm 3σ CD bias uniformity, and the highest available wafer throughput at half the running cost of alternative advanced silicon etch tools. The AdvantEdge Mesa system optimizes precision performance and productivity for the most demanding etch applications. |
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