An industry first and the latest star from Applied Materials Etch, Carina clears the crux of transistor scaling beyond 45nm with unique high-temperature high-k etch processing. With capabilities that overcome the complex challenges of high-k etch, Carina propels technology beyond the bounds of today’s conventional materials. Leveraging Applied's years of experience in high-k etching, Carina offers low-risk high-k capabilities beyond any other commercially available today. And with a clear cost-of-ownership advantage gained through hardware and process productivity improvements.

Carina’s enhanced process window facilitates simultaneous satisfaction of requirements that, to date, have necessitated tradeoffs in performance among all commercially available high-k etch systems. Polysilicon and metal profiles are extended smoothly through the high-k layer right to the substrate interface with none of the “foot” characteristic of conventional processing temperatures. Concurrently, extraordinary high-k/silicon selectivity ensures zero silicon recess in the source/drain region. Improved byproduct volatility leaves wafer surfaces devoid of the high-k residue observed in conventional-temperature etching.

As a standalone system or integrated onto the Centura mainframe with AdvantEdge G3 Silicon Etch chambers and Axiom post-etch treatment chambers, Carina will keep your production on course as you navigate the transition to high-k/metal gates in logic and memory devices well beyond the limit of today’s technology.