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Applied Aera2 for Lithography
The Applied Aera2 system introduces a unique technology for monitoring and correcting mask-based, critical dimension uniformity (CDU) in wafer fab volume production. Proprietary IntenCD technology uses true aerial imaging to generate a high definition, high precision, map of mask-based wafer CDU.
It is well known that at least 50% of the wafer CDU budget originates from the reticle. Designed to emulate a scanner, Aera2 with IntenCD correlates linearly with the wafer CD effect created by different sources of mask variation. Generating this information in the fab allows for optimized mask cleaning intervals and therefore extends mask availability and lifetime. A fab can feed forward IntenCD maps to advanced lithography scanners for dose correction of intrafield wafer CDU variations. IntenCD technology with advanced scanners provides customers with a solution that widens the lithography process window to improve overall CD uniformity and, ultimately, device yield.
Applied Aera2 Mask Inspection
The Applied Aera2 Mask Inspection system introduces unique capabilities for qualifying the full range of masks used for dry and immersion technology nodes and for monitoring critical dimension (CD) variation in mask volume production. It is the industry’s first production-worthy inspection tool to use true aerial imaging for inspecting the reticle as it will appear in the wafer plane and predicting defect printability.
Designed to emulate a scanner and with superior signal-to-noise performance, Aera2 clearly identifies signals from defects of all types and locations; these signals in turn correlate closely with the effects each defect would create on the wafer. Thus defects are automatically classified as non-printing or printing relative to a given print threshold value and the aerial image reveals the ones most likely to print. By enabling printability prediction, Aera2 offers a capability absent in standard high-resolution inspection systems and cuts inspection time to 1 hour for today’s shortest time to decision. All mask technologies can be inspected as aerial imaging inherently accounts for mask-related phenomena associated with the range of resolution enhancement techniques used at advanced nodes.
Equipped with IntenCD for high-density, high-precision scanning of the entire reticle, Aera2 can generate maps of CD trends that could signal manufacturing process problems. Global trends can be resolved to approximately 1nm. Mapping occurs concurrent with inspection and can be performed for a range of applications and simultaneously for multiple feature sizes.
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